SK hynix has officially showcased the samples of the world’s first 321-layer NAND and next-generation memory solutions for AI demand at a global industry conference in the US. The company is the world’s second-largest memory chip maker said “With timely introduction of the high-performance and high-capacity NAND, we will strive to meet the requirements of the AI era and continue to lead innovation,” Choi Jung-dal, Head of NAND Development at SK hynix said in his keynote speech at the conference.
Choi added the company expects the ongoing development of the 321-layer product, the fifth generation of the 4D NAND, to help the company solidify its technological leadership in the NAND industry.
SK hynix also confirmed that it will enhance its completion rate of the 321-layer NAND flash and begin mass production in the first half of 2025. Compared to the previous generation of 512 gigabits (Gb), the 321-layer NAND flash has improved productivity by 59%. However, the company also launched an enterprise SSD (eSSD) with a PCIe 5th generation interface and Universal Flash Storage (UFS) 4.0, optimized for AI demand. The company also mentioned that it also working on the development of 6th-generation PCIe and next-gen UFS 5.0.
Meanwhile, Samsung Electronics showcased its new data center SSD product PM9D3a equipped with 8th generation V-NAND at FMS.
