Samsung is developing next-generation “gate-all-around” (GAA) technology, aimed for application in the 2-nanometer (nm) foundry processes and it is expected to mass produce next year.
According to the new report, Samsung will present a paper on GAA tech at the VLSI (Very Large Scale Integration) Symposium 2024. The prestigious global semiconductor conference will take place in Hawaii from June 16 to 20. It is one of the biggest semiconductor conferences in the world along with the International Solid-State Circuits Conference (ISSCC) and the International Electron Devices Meeting (IEDM).
The Very Large Scale Integration (VLSI) Symposium is considered to be one of the top three semiconductor conferences in the world along with the International Solid-State Circuits Conference (ISSCC) and the International Electron Devices Meeting (IEDM), where the latest semiconductor technologies are discussed.
Currently, Samsung Electronics is the only company in the world mass producing this technology. Samsung started researching GAA technology in the early 2000s and was the first to apply it in 3-nm foundry mass production in 2022.
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